Silicon MOS transconductance scaling into the overshoot regime
- 1 August 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 14 (8), 375-378
- https://doi.org/10.1109/55.225584
Abstract
Simulations incorporating velocity overshoot are used to derive the dependence of deep-submicrometer MOS transconductance on low-field mobility mu /sub eff/ and channel length L/sub ch/. In contract to strict velocity saturation, saturated transconductance departs from a strict mu /sub eff//L/sub ch/ dependence when overshoot is considered. Constraints on mu /sub eff/ derived from conventional scaling laws together with strong mu /sub eff/ dependencies in these regimes indicate the importance of low-field inversion layer control and optimization. Transconductance in saturation is shown to approach a well-defined limit for very high mu /sub eff/.Keywords
This publication has 21 references indexed in Scilit:
- Simulation Of ULSI Silicon MOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Modeling of high energy electrons in n-MOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Evaluation of impact ionization modeling in the framework of hydrodynamic equationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Hydrodynamic equations for semiconductors with nonparabolic band structureIEEE Transactions on Electron Devices, 1991
- Full Band Monte Carlo Program for Electrons in SiliconPublished by Springer Nature ,1991
- A general purpose device simulator coupling Poisson and Monte Carlo transport with applications to deep submicron MOSFETsIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1989
- A physically based mobility model for numerical simulation of nonplanar devicesIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1988
- Monte-Carlo simulation of submicrometer Si n-MOSFETs at 77 and 300 KIEEE Electron Device Letters, 1988
- Transport equations for electrons in two-valley semiconductorsIEEE Transactions on Electron Devices, 1970
- Carrier mobilities in silicon empirically related to doping and fieldProceedings of the IEEE, 1967