Electrical doping of gas-sensitive, semiconducting Ga2O3 thin films
- 31 August 1996
- journal article
- Published by Elsevier in Sensors and Actuators B: Chemical
- Vol. 34 (1-3), 373-377
- https://doi.org/10.1016/s0925-4005(96)01829-1
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Electron mobility in single- and polycrystalline Ga2O3Journal of Applied Physics, 1993
- Sensing reducing gases at high temperatures using long-term stable Ga2O3 thin filmsSensors and Actuators B: Chemical, 1992
- Gallium oxide thin films: A new material for high-temperature oxygen sensorsSensors and Actuators B: Chemical, 1991
- Electrical properties of β-Ga2O3 single crystals. IIJournal of Solid State Chemistry, 1978
- Electrical properties of β-Ga2O3 single crystalsSolid State Communications, 1976