Host isotope fine structure of local modes: C and Si in GaAs
- 30 October 1982
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 15 (30), L1045-L1051
- https://doi.org/10.1088/0022-3719/15/30/001
Abstract
A detailed theory is presented for the recently observed Ga isotope fine structure of local vibrational modes of C and Si impurities on an As site in GaAs. It is found that the magnitude of the splitting of the C line implies a substantial increase in the bend/stretch force constant ratio at the impurity.Keywords
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