Surface and interface electronic structure of gaas and other III–V compounds
- 1 September 1975
- journal article
- research article
- Published by Taylor & Francis in C R C Critical Reviews in Solid State Sciences
- Vol. 5 (2), 231-242
- https://doi.org/10.1080/10408437508243481
Abstract
(1975). Surface and interface electronic structure of gaas and other III–V compounds. C R C Critical Reviews in Solid State Sciences: Vol. 5, No. 2, pp. 231-242.Keywords
This publication has 22 references indexed in Scilit:
- Photoemission Partial Yield Measurements of Unoccupied Intrinsic Surface States for Ge(111) and GaAs(110)Physical Review Letters, 1974
- Intrinsic surface states of (110) surfaces of group IV and III-V semiconductorsPhysical Review B, 1974
- Adsorption of oxygen on clean cleaved (110) gallium-arsenide surfacesPhysical Review B, 1974
- Surface state band on GaAs (110) faceApplied Physics Letters, 1974
- Bond-Orbital Model and the Properties of Tetrahedrally Coordinated SolidsPhysical Review B, 1973
- Observation of a Band of Silicon Surface States Containing One Electron Per Surface AtomPhysical Review Letters, 1972
- Photoemission Densities of Intrinsic Surface States for Si, Ge, and GaAsPhysical Review Letters, 1972
- Electronic properties of clean cleaved {110} GaAs surfacesSurface Science, 1971
- Relationship of Surface-State Band Structure to Surface Atomic Configuration of Zinc Blende (110)Physical Review B, 1970
- Metal-semiconductor surface barriersSolid-State Electronics, 1966