Zeeman spectroscopy on Ti-doped GaAs and GaP
- 1 October 1987
- journal article
- letter
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 2 (10), 679-682
- https://doi.org/10.1088/0268-1242/2/10/009
Abstract
Zeeman spectroscopy measurements on the sharp line structure observed in the absorption and photoluminescence spectrum of GaP:Ti around 0.61 eV are interpreted as 2T2 implies/implied by 2E transitions of Ti3+(d1). A related system of lines at 0.57 eV in GaAs:Ti is similarly interpreted.Keywords
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