Charge trapping and defect segregation in quartz
- 1 July 1999
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 86 (1), 205-208
- https://doi.org/10.1063/1.370718
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Cathodoluminescence microcharacterization of the defect structure of irradiated hydrated and anhydrous fused silicon dioxidePhysical Review B, 1998
- Electron Probe Microanalysis of Insulating Materials: Quantification Problems and Some Possible SolutionsX-Ray Spectrometry, 1996
- Electron irradiation-induced changes in the surface topography of silicon dioxideJournal of Applied Physics, 1996
- Cathodoluminescence microcharacterization of the defect structure of quartzPhysical Review B, 1995
- Electron irradiation induced outgrowths from quartzJournal of Applied Physics, 1995
- Optical Properties and Structure of Defects in Silica GlassJournal of the Ceramic Society of Japan, 1991
- Some considerations on the electric field induced in insulators by electron bombardmentJournal of Applied Physics, 1986
- Electron trapping in amorphous SiO2 studied by charge buildup under electron bombardmentJournal of Applied Physics, 1985
- Theory of defects in vitreous silicon dioxidePhysical Review B, 1983
- Theory of the peroxy-radical defect in-SiPhysical Review B, 1982