Evidence of Hole-Optical-Phonon Interaction in Degenerate Silicon in Tunneling Measurements
- 29 January 1968
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 20 (5), 204-207
- https://doi.org/10.1103/PhysRevLett.20.204
Abstract
Tunneling from a metal into degenerate -type silicon exhibits peaks in at biases , where is the optical-phonon energy of the semiconductor. It is suggested that these peaks reflect modifications in the bulk semiconductor states at energies above and below the Fermi energy arising from hole-optical-phonon interaction. An additional peak near the optical-phonon frequency, but well resolved from it, is identified with vibrations of the boron acceptor impurity.
Keywords
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