Formation and elimination of surface ion milling defects in cadmium telluride, zinc sulphide and zinc selenide
- 1 January 1985
- journal article
- Published by Elsevier in Ultramicroscopy
- Vol. 17 (3), 203-211
- https://doi.org/10.1016/0304-3991(85)90087-7
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- An MBE route towards CdTe/InSb superlatticesJournal of Vacuum Science & Technology B, 1985
- A structural and compositional analysis of interfaces in ZnSe0.94S0.06 layers grown on to GaAs by OMCVDJournal of Materials Science, 1984
- High resolution transmission electron microscopy (HRTEM) of interfaces in epitaxial ZnSeyS1 − y grown by MOCVDJournal of Crystal Growth, 1984
- Microstructural studies of CdTe and InSb films grown by molecular beam epitaxyJournal of Applied Physics, 1984
- Iodine ion milling of indium-containing compound semiconductorsApplied Physics Letters, 1984
- Cross-sectional transmission electron microscopy of electroluminescent thin films fabricated by various deposition methodsJournal of Crystal Growth, 1983
- Ion-beam damage in hollanditeJournal of Materials Science, 1983
- Dynamic observation of defect annealing in CdTe at lattice resolutionNature, 1982
- The structure and optical properties of polycrystalline ZnSχSe1-χ prepared by chemical vapour depositionJournal of Crystal Growth, 1982
- Comparative study of annealed neon-, argon-, and krypton-ion implantation damage in siliconJournal of Applied Physics, 1978