A structural and compositional analysis of interfaces in ZnSe0.94S0.06 layers grown on to GaAs by OMCVD
- 1 November 1984
- journal article
- Published by Springer Nature in Journal of Materials Science
- Vol. 19 (11), 3726-3731
- https://doi.org/10.1007/bf02396945
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- High resolution transmission electron microscopy (HRTEM) of epitaxially grown ZnSe and ZnSe/GaAs interfacesJournal of Materials Science Letters, 1984
- Lattice structure at ZnSeGaAs heterojunction interfaces prepared by organometallic chemical vapor depositionThin Solid Films, 1983
- Manganese doping of ZnS and ZnSe epitaxial layers grown by organometallic chemical vapour depositionJournal of Crystal Growth, 1982
- The organometallic chemical vapour deposition of ZnS and ZnSe at atmospheric pressureJournal of Crystal Growth, 1982
- Growth and doping of ZnSe and ZnSxSe1-x by organometallic chemical vapor depositionJournal of Crystal Growth, 1982
- Growth and characterization of heteroepitaxial zinc selenideJournal of Crystal Growth, 1981
- Epitaxial growth of ZnSe on (100) GaAs by open-tube transport of elemental vapours in H2 flowsJournal of Crystal Growth, 1981
- Transport kinetics in horizontal ZnS epitaxial growth systemsJournal of Crystal Growth, 1978
- Organometallic vapor deposition of epitaxial ZnSe films on GaAs substratesApplied Physics Letters, 1978