Ion beam studies of the static and dynamic properties of dopants in diamond
- 1 January 1992
- journal article
- Published by Elsevier in Materials Science and Engineering B
- Vol. 11 (1-4), 249-256
- https://doi.org/10.1016/0921-5107(92)90220-4
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Materials modification: doping of diamond by ion implantationMaterials Science and Engineering B, 1992
- The redistribution of implanted atoms and radiation damage during the implantation doping of diamondNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
- Depth profiling of implanted 13C in diamond as a function of implantation temperatureNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1990
- Lattice disorder in α-Al2O3 induced by niobium implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1990
- Sodium transport in β″-alumina crystals under argon ion bombardmentNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1990
- Nuclear reaction profiling of implanted interstitial redistribution in diamondNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988
- Activation of boron-dopant atoms in ion-implanted diamondsPhysical Review B, 1988
- Volume expansion of diamond during ion implantationPhysical Review B, 1986
- Volume expansion of diamond during ion implantation at low temperaturesNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- Light volatiles in diamond: Physical interpretation and genetic significanceNuclear Instruments and Methods, 1980