An investigation of the power characteristics and saturation mechanisms in HEMTs and MESFETs
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (8), 1197-1206
- https://doi.org/10.1109/16.2538
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- The influence of device physical parameters of HEMT large-signal characteristicsIEEE Transactions on Microwave Theory and Techniques, 1988
- Power Optimization of GaAs Implanted FET's Based on Large-Signal ModelingIEEE Transactions on Microwave Theory and Techniques, 1987
- High-efficiency millimeter-wave GaAs/GaAlAs power HEMT'sIEEE Electron Device Letters, 1986
- Modulation-doped GaAs/(Al,Ga)As heterojunction field-effect transistors: MODFETsProceedings of the IEEE, 1986
- Design of Broad-Band Power GaAs FET AmplifiersIEEE Transactions on Microwave Theory and Techniques, 1984
- Highly Accurate Design of Spiral Inductors for MMIC's with Small Size and High Cut-Off Frequency CharacteristicsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984
- A Technique for Predicting Large-Signal Performance of a GaAs MESFETIEEE Transactions on Microwave Theory and Techniques, 1978
- Dependence of GaAs power MESFET microwave performance on device and material parametersIEEE Transactions on Electron Devices, 1977