Strong Electric Field Heating of Conduction-Band Electrons in SiO2

Abstract
We demonstrate that average conduction-band electrons in a wide-band-gap insulator, SiO2, are heated several electronvolts above the conduction-band edge at fields of 5 to 12 MV/cm. The electronic energy distribution appears to be stabilized at these high fields by energy-loss mechanisms other than LO-phonon scattering.

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