Photoresponse of a p-type Si field emitter
- 1 May 2004
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 22 (3), 1218-1221
- https://doi.org/10.1116/1.1736637
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Fabrication of a GaAs Emitter with a High Aspect Ratio for Generation of Prebunched Electron Beam Using Gunn EffectJapanese Journal of Applied Physics, 2003
- Point x-ray source using graphite nanofibers and its application to x-ray radiographyApplied Physics Letters, 2003
- Low leakage current optically gated silicon field emitter arraysJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2003
- Emission characteristics of a GaAs wedge emitter monolithically fabricated with an air bridge and a cantilever anodeJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2003
- Development of triode-type carbon nanotube field-emitter arrays with suppression of diode emission by forming electroplated Ni wall structureJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2003
- A monolithic field emitter array with a JFETIEEE Transactions on Electron Devices, 2002
- Laser-assisted electron emission from gated field-emittersNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2002
- Carbon nanotubes as electron source in an x-ray tubeApplied Physics Letters, 2001
- Field emitter array development for high frequency applicationsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- Field emitter array development for microwave applications. IIJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998