Emission characteristics of a GaAs wedge emitter monolithically fabricated with an air bridge and a cantilever anode
- 1 January 2003
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 21 (1), 471-473
- https://doi.org/10.1116/1.1524139
Abstract
GaAs wedge emitters with an air bridge anode and a cantilever anode were monolithically fabricated using a micromachining technique. The threshold voltage of electron emission is about 8 V for the diode between the emitter and the air bridge anode, while only 1.5 V for the diode between the emitter and the cantilever anode. The current–voltage characteristic of the air bridge diode is due to a field emission, on the other hand, that of the cantilever diode is recognized as a direct tunneling of electrons through the reduced air gap between the emitter and the cantilever by electrostatic force.Keywords
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