The heteroepitaxial growth of GaP films on Si substrates
- 1 January 1977
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 37 (1), 13-22
- https://doi.org/10.1016/0022-0248(77)90138-5
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Preparation and properties of heteroepitaxial GaP films on Si substratesThin Solid Films, 1976
- Heteroepitaxial growth of GaP on siliconJournal of Crystal Growth, 1975
- The use of metalorganics in the preparation of semiconductor materials: Growth on insulating substratesJournal of Crystal Growth, 1972
- The Growth of Ge-GaAs and GaP-Si Heterojunctions by Liquid Phase EpitaxyJournal of the Electrochemical Society, 1972
- Selective Growth of Heteroepitaxial GaP on Si SubstratesJournal of the Electrochemical Society, 1972
- Epitaxial Layers of Gallium Phosphide on SiliconPhysica Status Solidi (a), 1970
- Heteroepitaxial Growth of GaP on Si Substrates by Evaporation MethodJournal of Applied Physics, 1970
- Growth of Single Crystal GaP from Organometallic SourcesJournal of the Electrochemical Society, 1969
- The Synthesis and Epitaxial Growth of GaP by Fused Salt ElectrolysisJournal of the Electrochemical Society, 1968
- Etching of Dislocations on the Low-Index Faces of GaAsJournal of Applied Physics, 1965