Heteroepitaxial growth of GaP on silicon
- 1 December 1975
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 31, 147-157
- https://doi.org/10.1016/0022-0248(75)90124-4
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Optical Characterization of GaAs Layers Grown on Ge SubstratesJournal of the Electrochemical Society, 1975
- Properties of GaP light-emitting diodes grown on spinel substratesSolid-State Electronics, 1974
- Difference between the (001) facet and the vicinal planes in vapour phase epitaxial growth of GaAsJournal of Crystal Growth, 1974
- Asymmetric Cracking in III–V CompoundsJournal of the Electrochemical Society, 1974
- The use of metalorganics in the preparation of semiconductor materials: Growth on insulating substratesJournal of Crystal Growth, 1972
- Lang Topographic Studies of III-V Heteroepitaxial Films Grown on Sapphire and SpinelJournal of Applied Physics, 1972
- The Growth of Ge-GaAs and GaP-Si Heterojunctions by Liquid Phase EpitaxyJournal of the Electrochemical Society, 1972
- Preferential Etching and Etched Profile of GaAsJournal of the Electrochemical Society, 1971
- Epitaxial Layers of Gallium Phosphide on SiliconPhysica Status Solidi (a), 1970
- Growth of Single Crystal GaP from Organometallic SourcesJournal of the Electrochemical Society, 1969