Two-dimensional electron system with extremely low disorder
- 21 November 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (21), 2080-2082
- https://doi.org/10.1063/1.100306
Abstract
We report on the growth of modulation-doped GaAs/AlxGa1−x As heterostructures with extremely low disorder by molecular beam epitaxy. In growing these structures we employed the atomic plane doping technique and ultrathick (>1000 Å) spacer layers with graded composition. The structures have mobilities (μ) on the order of 1×106 cm2/V s (at 4.2 K) for areal densities (ns) as low as 4×1010 cm−2. Quantum transport measurements in these structures exhibit new fractional quantum Hall states and demonstrate their exceptionally high quality.Keywords
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