Increased size uniformity through vertical quantum dot columns
Open Access
- 1 May 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 175-176, 707-712
- https://doi.org/10.1016/s0022-0248(96)01227-4
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Structural and photoluminescence properties of growth-induced InAs island columns in GaAsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Self-Organization in Growth of Quantum Dot SuperlatticesPhysical Review Letters, 1996
- Vertically Aligned and Electronically Coupled Growth Induced InAs Islands in GaAsPhysical Review Letters, 1996
- Vertically Self-Organized InAs Quantum Box Islands on GaAs(100)Physical Review Letters, 1995
- Effects of monolayer coverage, flux ratio, and growth rate on the island density of InAs islands on GaAsApplied Physics Letters, 1995
- Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfacesApplied Physics Letters, 1993
- Formation and morphology of InAs/GaAs heterointerfacesPhysical Review B, 1992
- Initial growth stage of InAs/GaAs studied by RHEED-TRAXS methodJournal of Crystal Growth, 1991
- Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)Physical Review Letters, 1990