Determination of charge carrier concentration from low-field electroreflectance spectra
- 16 August 1977
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 42 (2), 629-637
- https://doi.org/10.1002/pssa.2210420227
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- A Measurement of Doping Inhomogeneity by Low-Field ElectroreflectanceJapanese Journal of Applied Physics, 1976
- Analysis of modulation spectra of stratified mediaJournal of the Optical Society of America, 1973
- Doping inhomogeneities in semiconductors measured by electroreflectanceSurface Science, 1973
- Third-derivative modulation spectroscopy with low-field electroreflectanceSurface Science, 1973
- On the determination of the carrier concentration of GaAs1−xPxPhysica Status Solidi (a), 1973
- Doping inhomogeneities in silicon observed by a high-resolution electroreflectance techniquePhysica Status Solidi (a), 1972
- Linearized Third-Derivative Spectroscopy with Depletion-Barrier ModulationPhysical Review Letters, 1972
- Measurement of the resistivity of GaPPhysica Status Solidi (a), 1971
- A Spreading Resistance Technique for Resistivity Measurements on SiliconJournal of the Electrochemical Society, 1966
- Measurement of Sheet Resistivities with the Four-Point ProbeBell System Technical Journal, 1958