On the determination of the carrier concentration of GaAs1−xPx
- 16 May 1973
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 17 (1), 251-256
- https://doi.org/10.1002/pssa.2210170129
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- The future for LEDsIEEE Spectrum, 1972
- Measurement of the resistivity of GaPPhysica Status Solidi (a), 1971
- Elastic Properties of ZnS Structure SemiconductorsPhysical Review B, 1970
- Effect of junction curvature on breakdown voltage in semiconductorsSolid-State Electronics, 1966
- Effect of the Direct-Indirect Transition on the Hall Effect in Ga(As1−xPx)Journal of Applied Physics, 1966