Epitaxial growth of MgO on GaAs(001) for growing epitaxial BaTiO3 thin films by pulsed laser deposition
- 9 March 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (10), 1199-1201
- https://doi.org/10.1063/1.107404
Abstract
MgO buffer layers were deposited on GaAs by pulsed laser deposition for epitaxial growth of BaTiO3. MgO was grown epitaxially on GaAs for the first time; the orientation is (001) on GaAs(001). The best crystallographic quality was obtained at 350 °C in 5×10−6 Torr O2. BaTiO3 films with (001) orientation grew epitaxially on MgO/GaAs. The in‐plane epitaxial relationship was BaTiO3[100]∥ MgO[100]∥ GaAs[100] in spite of a large lattice mismatch (25.5%) between MgO and GaAs.Keywords
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