Electronic transport in doped poly (3,4-ethylenedioxythiophene) near the metal-insulator transition
- 15 October 1997
- journal article
- Published by Elsevier in Synthetic Metals
- Vol. 90 (1), 61-68
- https://doi.org/10.1016/s0379-6779(97)81227-1
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Metallic conductivity at low temperatures in poly(3,4-ethylenedioxythiophene) doped withPhysical Review B, 1997
- Pressure dependence of conductivity and magnetoconductance in ion-irradiated polyimideJournal of Physics: Condensed Matter, 1997
- Transport properties of ion-implanted and chemically doped polyaniline filmsPhysical Review B, 1996
- Electronic transport in the metallic state of oriented poly(p-phenylenevinylene)Physical Review B, 1996
- Transport in polyaniline near the critical regime of the metal-insulator transitionPhysical Review B, 1993
- Magnetoconductance of metallic Si:B near the metal-insulator transitionPhysical Review B, 1992
- Electrical conductivity of metallic Si:B near the metal-insulator transitionPhysical Review B, 1992
- Study on the electrical conduction mechanism of polypyrrole filmsSynthetic Metals, 1991
- High-resolution study of conductivity and cell potential versus doping concentration in potassium-doped polyacetylene: Correlation with structural transitionsPhysical Review B, 1991
- Temperature dependence of the electrical conductivity of-doped poly(p-phenylene vinylene)Physical Review B, 1989