Excitons bound to an isoelectronic trap in silicon
- 31 January 1979
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 18-19, 93-96
- https://doi.org/10.1016/0022-2313(79)90080-2
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Auger transition rates for excitons bound to acceptors in Si and GePhysical Review B, 1977
- Auger lifetimes for excitons bound to neutral donors and acceptors in SiPhysica Status Solidi (b), 1977
- Bound exciton lifetimes for acceptors in SiSolid State Communications, 1977
- Theory of isoelectronic trapsJournal of Luminescence, 1973
- Isoelectronic traps in semiconductors (experimental)Journal of Luminescence, 1973
- Excitonic Molecule Bound to the Isoelectronic Nitrogen Trap in GaPPhysical Review B, 1969
- Zeeman Effect and Crystal-Field Splitting of Excitons Bound to Isoelectronic Bismuth in Gallium PhosphidePhysical Review B, 1969
- Fluorescent Decay Times of Excitons Bound to Isoelectronic Traps in GaP and ZnTePhysical Review B, 1967
- Isoelectronic Donors and AcceptorsPhysical Review Letters, 1966