On the kinetics of thermal donors in oxygen-rich silicon in the range from 450 to 900°C
- 16 April 1980
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 58 (2), K223-K226
- https://doi.org/10.1002/pssa.2210580274
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- On the electrical activity of oxygen in siliconPhysica Status Solidi (a), 1979
- Annealing behavior of the oxygen donor in siliconApplied Physics Letters, 1979
- The effects of heat treatment on dislocation-free oxygen-containing silicon crystalsJournal of Applied Physics, 1977
- Beeinflussung des spezifischen Widerstandes von sauerstoffreichen Silizium‐Einkristallen durch TemperprozesseCrystal Research and Technology, 1977
- Mechanism of the Formation of Donor States in Heat-Treated SiliconPhysical Review B, 1958
- Effect of Heat Treatment upon the Electrical Properties of Silicon CrystalsJournal of Applied Physics, 1957