Electrical properties of PZT thin films for memory application
- 1 November 1995
- journal article
- research article
- Published by Taylor & Francis in Integrated Ferroelectrics
- Vol. 11 (1), 161-170
- https://doi.org/10.1080/10584589508013588
Abstract
The development of ferroelectric memory device requires improvements in electrical characteristics such as fatigue, retention, imprint and other properties. Fatigue properties of PZT thin films were improved by using Pt/IrO2 or Ir/IrO2 used as electrodes, we reported. This report presents a study of the retention and the imprint characteristics of PZT thin films on various electrodes. Pt/IrO2 and Ir/IrO2 layer structures were used as electrodes of the PZT capacitors. In the case of using an Ir/IrO2 electrode, the improvements in electrical properties from the measurements of the retention and the imprint characteristics.Keywords
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