X-ray lithography with a Ag-Se/Ge-Se inorganic resist using synchrotron radiation
- 15 January 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (2), 565-567
- https://doi.org/10.1063/1.340087
Abstract
A Ag-Se/Ge-Se inorganic resist is applied in x-ray lithography using synchrotron radiation (SR). Usable sensitivity of 0.3–3 times that of a polymethylmethacrylate (PMMA) resist and high contrast (γ∼3.5) are obtained through SR exposures. By utilizing the fringes of masked SR flux caused by Fresnel diffraction, 500-Å-wide fine lines are formed by using x rays of 2–10 Å in wavelength. It is determined that a high-density resist, such as a Ag-Se/Ge-Se inorganic resist, is favorable for forming micropatterns using x rays because of the short ranges of the electrons generated by the x rays in the resist.Keywords
This publication has 13 references indexed in Scilit:
- Silver diffusion in Ag2Se/GeSe2 inorganic resist systemJournal of Vacuum Science & Technology B, 1986
- Electron-beam investigation and use of Ge–Se inorganic resistJournal of Vacuum Science & Technology B, 1986
- Theoretical studies of the electron scattering effect on developed pattern profiles in x-ray lithographyJournal of Applied Physics, 1985
- Excimer laser exposure of Ag2Se/GeSe2: High contrast effectsJournal of Vacuum Science & Technology B, 1985
- Proximity effects and printability of defects in GexSe1−x resistJournal of Vacuum Science & Technology B, 1985
- Germanium selenide: A resist for low-energy ion beam lithographyJournal of Vacuum Science and Technology, 1981
- A new inorganic electron resist of high contrastApplied Physics Letters, 1977
- Application of synchrotron radiation to x-ray lithographyJournal of Applied Physics, 1976
- A novel inorganic photoresist utilizing Ag photodoping in Se-Ge glass filmsApplied Physics Letters, 1976
- Fundamental aspects of electron beam lithography. I. Depth-dose response of polymeric electron beam resistsJournal of Applied Physics, 1973