ENERGY DEPENDENCE OF ELECTRICAL PROPERTIES OF INTERFACE STATES IN Si–SiO2 INTERFACES
- 1 July 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 17 (1), 16-18
- https://doi.org/10.1063/1.1653234
Abstract
Measurements of the energy dependence of surface‐state density, capture cross section, and frequency dispersion were undertaken with the MOS conductance technique. Capture cross sections are constant in the depletion range and decrease exponentially towards the band edge. The frequency dispersion factor is independent of surface potential for wet oxide and becomes very small at the flatband point for dry oxides.Keywords
This publication has 3 references indexed in Scilit:
- Temperature dependence of apparent threshold voltage of silicon MOS transistors at cryogenic temperaturesIEEE Transactions on Electron Devices, 1968
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967
- DENSITY OF SiO2–Si INTERFACE STATESApplied Physics Letters, 1966