Electronic structure of the deep boron acceptor in boron-doped6H-SiC

Abstract

A high-frequency (95 GHz) and conventional-frequency (9.3 GHz) pulsed electron paramagnetic resonance and electron-nuclear double resonance (ENDOR) study is reported on the deep boron acceptor in $6H$-SiC. The results support a model in which the deep boron acceptor consists of a boron on a silicon position with an adjacent carbon vacancy. The carbon vacancy combines with a boron along the hexagonal $c$ axis. It is concluded that 70–90% of the spin density resides in the silicon dangling bonds surrounding the vacancy and another 9% on the neighboring carbon atoms. The spin-density distribution is more localized than in the case of the shallow boron acceptor as deduced from the ENDOR experiments.