Interband magnetoabsorption of In_{0.53}Ga_{0.47}As

Abstract

Interband magneto-optical absorption in the Faraday and the Voigt configurations has been studied near liquid-He temperature in ${\mathrm{In}}_{0.53}$ ${\mathrm{Ga}}_{0.47}$As grown by liquid-phase epitaxy on InP. Using a quasi-Ge model analysis with exciton corrections, the interband data has yielded $E_g=0.813\mathrm{}\pm 0.001$ eV, $m_0(\frac{1}{m_c}+\frac{1}{m_{\mathrm{hh}}})=26.5\mathrm{}\pm 0.5$, $m_0(\frac{1}{m_c}+\frac{1}{m_{\mathrm{lh}}})=44.0\mathrm{}\pm 1.0$, and ${\gamma }_3-{\gamma }_2=0.7\mathrm{}\pm 0.2$. Using $E_p=25.3\mathrm{}$ eV and $\Delta =0.36\mathrm{}$ eV (from linear interpolation between InAs and GaAs) and $\frac{m_c}{m_0}=0.041\mathrm{}$ (from earlier intraband measurements), the present interband data has yielded a set of parameters for the quasi-Ge model; in particular, $m_{\mathrm{hh}}\simeq 0.47m_0$ and $m_{\mathrm{lh}}\simeq 0.050m_0$. A precise determination of $E_p$ requires a direct measurement of $\Delta$ and $g_c$.