Silicon lattice parameters as an absolute scale of length for high precision measurements of fundamental constants
- 16 April 1990
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 118 (2), 379-388
- https://doi.org/10.1002/pssa.2211180205
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Lattice distortions induced by carbon in siliconPhilosophical Magazine A, 1988
- High precision x-ray metrologyPrecision Engineering, 1988
- Gamma-ray energies from the reactionCl35(n,γ)Physical Review C, 1985
- Total-energy gradients and lattice distortions at point defects in semiconductorsPhysical Review B, 1985
- The lattice parameter of highly pure silicon single crystalsZeitschrift für Physik B Condensed Matter, 1982
- Absolute Measurement of the (220) Lattice Plane Spacing in a Silicon CrystalPhysical Review Letters, 1981
- A simple Bragg-spacing comparatorActa Crystallographica Section A, 1978
- Topographic observation of micro defects (e.g.`swirls') in nearly perfect crystalsJournal of Applied Crystallography, 1976
- Principles and design of Laue-case X-Ray interferometersThe European Physical Journal A, 1965
- Die Konstitution der Mischkristalle und die Raumf llung der AtomeThe European Physical Journal A, 1921