Yb-doped InP grown by metalorganic chemical vapor deposition
- 13 April 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (15), 977-979
- https://doi.org/10.1063/1.98260
Abstract
Rare-earth ion Yb is doped into InP at concentrations ranging from 1×1015 to 3×1018 cm−3 by metalorganic chemical vapor deposition (MOCVD) using Yb(C5H5)3. Uniform depth profiles revealed by secondary ion mass spectroscopy indicate that controlled rare-earth doping can be achieved by MOCVD. The grown layers show distinct photoluminescence (PL) spectra at 1.2 eV originating from intra-4f-shell transitions in Yb as well as near-band-edge emissions at 1.4 eV. In contrast to Yb-ion-implanted InP [H. Ennen, J. Schneider, G. Pomrenke, and A. Axman, Appl. Phys. Lett. 43, 943(1983)], PL spectra of MOCVD-grown layers below 30 K suggest the absence of Yb ions associated with other impurities or defects. This shows that MOCVD-grown Yb-doped InP is of higher quality than the Yb-ion-implanted InP.Keywords
This publication has 6 references indexed in Scilit:
- Photoluminescence optimization and characteristics of the rare-earth element erbium implanted in GaAs, InP, and GaPJournal of Applied Physics, 1986
- Zeeman analysis of the ytterbium luminescence in indium phosphidePhysical Review B, 1985
- Ytterbium-doped InP light-emitting diode at 1.0 μmApplied Physics Letters, 1985
- 1.54-μm electroluminescence of erbium-doped silicon grown by molecular beam epitaxyApplied Physics Letters, 1985
- Effects of growth temperature and [PH3]/[In(C2H5)3] on purity of epitaxial InP grown by metalorganic chemical vapour depositionElectronics Letters, 1985
- 1.54-μm luminescence of erbium-implanted III-V semiconductors and siliconApplied Physics Letters, 1983