Calculated temperature dependence of threshold current of GaAs-AlxGa1−xAs double heterostructure lasers

Abstract

The threshold current density J_th(T) of the GaAs‐Al_xGa_1−xAs double heterostructure laser is calculated by including both drift and diffusion mechanism for carrier leakage. For xE_gJ_th increases rapidly with further decrease in the aluminum fraction x in the ternary layers, in general agreement with previous work. The ratio J_th (70 °C)/J_th (22 °C) also increases rapidly for xP ternary is an important quantity in determining both the temperature dependence of threshold as well as room‐temperature threshold. In order to achieve a T₀≳150 K for x=0.28, the P‐ternary carrier concentration should be greater than 1.5×10¹⁷ cm⁻³.