How much Al in the AlGaAs–GaAs laser?
- 1 September 1974
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (9), 3887-3891
- https://doi.org/10.1063/1.1663880
Abstract
Maintenance of higher doping levels in the AlxGa1−xAs barrier layers of double‐heterostructure lasers permits one to use smaller molar fractions x, thereby minimizing the lattice mismatch between AlxGa1−xAs and GaAs. We estimate conduction‐band and valence‐band parameters of AlxGa1−xAs and show the relationship between laser threshold current and doping level.Keywords
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