Lattice-mismatch effects on properties in ZnSe layer grown on GaAs substrate by low pressure OMVPE
- 24 July 1985
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 72 (1-2), 27-30
- https://doi.org/10.1016/0022-0248(85)90113-7
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- High resolution transmission electron microscopy (HRTEM) of interfaces in epitaxial ZnSeyS1 − y grown by MOCVDJournal of Crystal Growth, 1984
- Growth temperature dependence of crystallographic and luminescent properties of ZnSxSe1−x (0 ⪕ x ⪕ 1) by low-pressure MOVPEJournal of Crystal Growth, 1984
- Growth of High-Quality ZnSe Films by Low-Pressure Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1984
- Growth and Properties of Undoped n-Type ZnSe by Low-Temperature and Low-Pressure OMVPEJapanese Journal of Applied Physics, 1984
- Comparison of MOCVD-Grown with Conventional II-VI Materials Parameters for EL Thin Films)Physica Status Solidi (a), 1984
- Lattice structure at ZnSeGaAs heterojunction interfaces prepared by organometallic chemical vapor depositionThin Solid Films, 1983
- The organometallic chemical vapour deposition of ZnS and ZnSe at atmospheric pressureJournal of Crystal Growth, 1982
- Growth and doping of ZnSe and ZnSxSe1-x by organometallic chemical vapor depositionJournal of Crystal Growth, 1982
- Photoluminescence and heterojunction properties of ZnSxSe1-x Epitaxial layers on GaAs and Ge Grown by organometallic CVDJournal of Electronic Materials, 1981
- Growth and characterization of undoped ZnSe epitaxial layers obtained by organometallic chemical vapour depositionThin Solid Films, 1978