Lattice structure at ZnSeGaAs heterojunction interfaces prepared by organometallic chemical vapor deposition
- 1 June 1983
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 104 (1-2), 133-143
- https://doi.org/10.1016/0040-6090(83)90554-0
Abstract
No abstract availableKeywords
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