Photoluminescence identification of residual donors in undoped GaAs grown by metalorganic chemical vapor deposition
- 1 February 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (5), 401-403
- https://doi.org/10.1063/1.99479
Abstract
A photoluminescence technique was used to identify residual donors in the 1014 cm−3 range in high-purity GaAs grown by metalorganic chemical vapor deposition. The measurements were taken at zero magnetic field. A narrow-linewidth tunable laser was used to resonantly enhance a specific narrow-linewidth ‘‘two-electron’’ satellite line of the donor-bound exciton, enabling determination of the 1s-to-2s donor energy separations. Ge was identified as the dominant residual donor. Lower levels of the donors X1 and X2 were observed in some samples. These are attributed to Si (or possibly Sn) and S donors.Keywords
This publication has 13 references indexed in Scilit:
- Identification of residual donors in high-purity epitaxial GaAs by magnetophotoluminescenceApplied Physics Letters, 1987
- Donor Identification in Bulk Gallium ArsenideMaterials Science Forum, 1986
- Donor identification in liquid phase epitaxial indium phosphideApplied Physics Letters, 1984
- Donor discrimination and bound exciton spectra in InPJournal of Applied Physics, 1983
- Photoluminescence studies of the amphoteric behavior of carbon and germanium in GaAsSolid State Communications, 1982
- Observation of shallow residual donors in high purity epitaxial GaAs by means of photoluminescence spectroscopySolid State Communications, 1981
- Excitons bound to neutral donors in InPPhysical Review B, 1978
- Residual Donors in High Purity Gallium Arsenide Epitaxially Grown from Vapor PhaseJapanese Journal of Applied Physics, 1977
- Identification of exciton-neutral donor complexes in the photoluminescence of high purity GaAsSolid State Communications, 1970
- Magnetospectroscopy of shallow donors in GaAsSolid State Communications, 1969