Dislocation Damping in Semiconductors and Abrupt versus Smooth Kinks

Abstract

A previous dragging point model of dislocation mobility is modified and applied to the dislocation damping data in Si and Ge. The motion of built‐in kinks along a dislocation is considered to be responsible for the damping. In contrast to the abrupt kink model, the free motion of the kinks is impeded by the dragging points. The predictions of this model are compared with those made on the basis of the abrupt kink model, with regard to (a) damping, (b) estimated kink width, and (c) dislocation mobility. The dragging‐point model seems to give a more consistent picture, although direct experimental verification of the presence of dragging points is not yet available. An improved table of derived parameters for the dragging‐point theory of dislocation mobility is given based on additional information from damping measurements in Ge.