The influence of the exchange interaction on the E.S.R. linewidth in amorphous silicon
- 1 January 1979
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 39 (1), 27-37
- https://doi.org/10.1080/13642817908245348
Abstract
The magnetic-field dependence of the E.S.R. linewidth in amorphous silicon has been measured in order to investigate the influence of the exchange interaction on the E.S.R. linewidth. A different field dependence was obtained for amorphous silicon prepared by the glow-discharge technique and by electron-beam evaporation. The experimental results are discussed in terms of exchange-coupled spins which are distributed either homogeneously or inhomogeneously. It is concluded that exchange interaction is necessary to account for a variety of experimental results obtained in these materials.Keywords
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