The Schottky-barrier height of the contacts between some rare-earth metals (and silicides) and p-type silicon
- 1 June 1981
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (11), 865-866
- https://doi.org/10.1063/1.92201
Abstract
Some rare‐earth elements, Tb, Er, Yb (including Y) and some of their respective silicides were found to make ohmic contacts to n‐type silicon. Forward I/V and photoresponse measurements give values of about 0.7 eV for the Schottky‐barrier height to p‐type silicon. The sum of this value and of the experimentally estimated barrier height to n‐type silicon, 0.4 eV, corresponds to the band gap of silicon.Keywords
This publication has 15 references indexed in Scilit:
- Resonant tunneling spectroscopy in Schottky diodesJournal of Applied Physics, 1980
- Interfacial Reaction and Schottky Barrier in Metal-Silicon SystemsPhysical Review Letters, 1980
- Measurements of the rectifying barrier heights of the various iridium silicides with n-SiApplied Physics Letters, 1979
- A modified forward I-V plot for Schottky diodes with high series resistanceJournal of Applied Physics, 1979
- Formation of iridium silicides from Ir thin films on Si substratesJournal of Applied Physics, 1979
- A Correction Diagram for the Photoelectric Measurement of MS-Barrier HeightsPhysica Scripta, 1978
- A review of the theory, technology and applications of metal-semiconductor rectifiersThin Solid Films, 1978
- Characterization of the interface states at a Ag/Si interface from capacitance measurementsJournal of Applied Physics, 1974
- Hafnium-Silicon Schottky Barriers: Large Barrier Height on p-Type Silicon and Ohmic Behavior on n-Type SiliconApplied Physics Letters, 1971
- Surface States and Rectification at a Metal Semi-Conductor ContactPhysical Review B, 1947