A new experimental method for the determination of the one phonon density of states in GaAs
- 28 February 1982
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 41 (7), 557-560
- https://doi.org/10.1016/0038-1098(82)90199-5
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Disorder-induced Raman scattering of In1−xGaxP in the transverse acoustic phonon regionSolid State Communications, 1981
- Raman scattering in InP1-xAsxalloysJournal of Physics C: Solid State Physics, 1980
- Infrared reflectivity spectra and Raman spectra of Ga1−xAlxAs mixed crystalsJournal of Applied Physics, 1979
- Study of zone-folding effects on phonons in alternating monolayers of GaAs-AlAsPhysical Review B, 1978
- Resonant Raman scattering in GaAsPhysical Review B, 1978
- Lattice dynamics of several A NB8–N compounds having the zincblende structure. II. Numerical calculationsPhysica Status Solidi (b), 1975
- Disorder-Activated Acoustic Mode in Raman Spectrum ofPhysical Review Letters, 1972
- Long-Wavelength Optical Phonons inPhysical Review B, 1971
- Lattice dynamics of III–V compoundsCanadian Journal of Physics, 1969
- Crystal Dynamics of Gallium ArsenidePhysical Review B, 1963