Alloying contacts to gallium arsenide by hot hydrogen and HCl gases
- 30 April 1968
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 11 (4), 469-470
- https://doi.org/10.1016/0038-1101(68)90029-4
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Metal-semiconductor contacts for GaAs bulk effect devicesSolid-State Electronics, 1967
- Construction and performance of epitaxial transferred electron oscillatorsSolid-State Electronics, 1967
- Ohmic Contacts to GaAs by a Simple Low Temperature Alloying ProcessJournal of the Electrochemical Society, 1967
- Low-temperature alloy contacts to gallium arsenide using metal halide fluxesSolid-State Electronics, 1966
- The Gunn effect in polar semiconductorsIEEE Transactions on Electron Devices, 1966
- Instabilities of Current in III–V SemiconductorsIBM Journal of Research and Development, 1964