Abstract
The d electronic state in the realistic structurally relaxed models of amorphous and liquid transition metals is investigated by using the recursion method. The local density of states is discussed extensively with relation to the local atomic environment. It is found that the density of states for the amorphous case has a double-peaked structure, whereas that for the liquid case is single-peaked. The electronic transport is discussed in a model after Mott (1972) involving s-d transitions and with different mean free paths for s and d electrons. The numerical results of the resistivity and thermoelectric power show quite excellent agreement with experimental ones.