In situ diagnostics of the decomposition of silacyclobutane on a hot filament by vacuum ultraviolet laser ionization mass spectrometry
- 6 February 2007
- journal article
- research article
- Published by Wiley in Journal of Mass Spectrometry
- Vol. 42 (5), 575-583
- https://doi.org/10.1002/jms.1186
Abstract
The gas‐phase reaction products of silacyclobutane (SCB) and 1, 1‐dideuterio‐silacyclobutane (SCB‐d2) from a hot‐wire chemical vapor deposition (HWCVD) chamber were diagnosed in situ using vacuum ultraviolet (VUV) laser single‐photon ionization (SPI) coupled with time‐of‐flight (TOF) mass spectrometry. The SCB molecule was found to decompose at a filament temperature as low as 900 °C. Both Si‐ (silylene, methylsilylene, and silene) and C‐containing (ethene and propene) species were produced from the SCB decomposition on the filament. Ethene and propene were detected by the mass spectrometer. It is demonstrated that the formation of ethene is favored over that of propene. The experimental study of hot‐wire decomposition of SCB‐d2 shows that propene is most likely produced by a process that is initiated by a 1,2‐H(D) migration to form n‐propylsilylene, followed by an equilibration with silacyclopropane, which then decomposes to propene. The detection of ethene in our experiment indicates that a competitive route of fragmentation exists for SCB decomposition on the filament. It has been shown that this competitive route occurs without H/D scrambling. The highly reactive silylene, silene, and methylsilylene species produced from SCB decomposition underwent either insertion reactions into the SiH bonds of the parent molecule or π‐type addition reaction across the double and triple CC bonds. The dimerization product of silene, 1,3‐disilacyclobutane, at m/z = 88 was also observed. Copyright © 2007 John Wiley & Sons, Ltd.Keywords
This publication has 34 references indexed in Scilit:
- Pyrolytic conversion of methyl- and vinylsilane polymers to Si-C ceramicsJournal of Materials Science, 1995
- Effect of carbonization on the growth of 3C-SiC on Si (111) by silacyclobutaneApplied Physics Letters, 1994
- Plasma-enhanced chemical vapor deposition of a-SiC:H films from organosilicon precursorsJournal of Vacuum Science & Technology A, 1994
- Growth of crystalline 3C-SiC on Si at reduced temperatures by chemical vapor deposition from silacyclobutaneApplied Physics Letters, 1993
- Kinetics of silicon carbide CVD: surface decomposition of silacyclobutane and methylsilaneThe Journal of Physical Chemistry, 1993
- Intrinsic stress and mechanical properties of hydrogenated silicon carbide produced by plasma-enhanced chemical vapor depositionJournal of Vacuum Science & Technology A, 1991
- Deposition of device quality, low H content amorphous siliconJournal of Applied Physics, 1991
- High-quality amorphous silicon germanium produced by catalytic chemical vapor depositionApplied Physics Letters, 1987
- Visible-Light Injection-Electroluminescent a-SiC/p-i-n DiodeJapanese Journal of Applied Physics, 1985
- Hydrogenated amorphous silicon carbide as a window material for high efficiency a-Si solar cellsSolar Energy Materials, 1982