Optical Spectroscopy Applied to the Study of Plasma Etching
- 1 January 1980
- journal article
- research article
- Published by SAGE Publications in Applied Spectroscopy
- Vol. 34 (1), 31-33
- https://doi.org/10.1366/0003702804730907
Abstract
The use of an optical spectrographic system in the study of a CF3H plasma process has been investigated. CF3H plasma etch rates of SiO2 are related to emission intensities of spectral lines of compounds identified in the plasma. HF is a definite component when SiO2 is etched with a CF3H plasma. This optical spectrographic system has the potential to control and eventually automate both plasma etch and deposition processes.Keywords
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