Polarity control of ZnO on sapphire by varying the MgO buffer layer thickness
- 14 May 2004
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 84 (22), 4562-4564
- https://doi.org/10.1063/1.1759377
Abstract
Polarity-controlled ZnO films with an MgO buffer layer were grown on c-plane sapphire by plasma-assisted molecular-beam epitaxy. Convergent beam electron diffraction results showed that Zn-polarity growth occurred when the MgO layer was thicker than 3 nm, whereas O-polarity growth occurred when the layer was less than 2 nm. Reflection high-energy electron diffraction results revealed that MgO growth was Stranski–Krastanov mode, and that the growth mode transition from two- to three-dimensional occurred when the layer was thicker than 1 nm. In conclusion, polarity conversion apparently occurs due to the different atomic structure between the wetting layer and islands of MgO.
Keywords
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