Equilibrium structure of monatomic steps on vicinal Si(001)
- 15 March 1992
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 45 (11), 5965-5968
- https://doi.org/10.1103/physrevb.45.5965
Abstract
The equilibrium structure of monatomic steps on vicinal Si(001) is described in terms of anisotropic nearest-neighbor and isotropic second-nearest-neighbor interactions between dimers. By comparing scanning-tunneling-microscopy data and this equilibrium structure, we obtained interaction energies of 0.38 eV between dimers in a row, 0.24 eV between sets of two dimers in adjacent rows, and -0.07 eV for the diagonal interaction between dimers in adjacent rows.Keywords
This publication has 7 references indexed in Scilit:
- Direct determination of step and kink energies on vicinal Si(001)Physical Review Letters, 1990
- Morphology and distribution of atomic steps on Si (001) studied with scanning tunneling microscopyApplied Physics Letters, 1990
- The atomic structure of vicinal Si(OO1) and Ge(001)Critical Reviews in Solid State and Materials Sciences, 1990
- Stabilities of single-layer and bilayer steps on Si(001) surfacesPhysical Review Letters, 1987
- Scanning tunneling microscopy of Si(001)Physical Review B, 1986
- Structure and Adsorption Characteristics of Clean Surfaces of Germanium and SiliconThe Journal of Chemical Physics, 1959
- The growth of crystals and the equilibrium structure of their surfacesPhilosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences, 1951