Morphology and distribution of atomic steps on Si (001) studied with scanning tunneling microscopy
- 1 January 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (1), 39-41
- https://doi.org/10.1063/1.102640
Abstract
We have studied the morphology and distribution of atomic steps on Si(001) with scanning tunneling microscopy. We find that native oxide removal at temperatures up to 1350 K leads to step pinning and bunching. Cleaning at temperatures above 1450 K leads to regular step distributions which reflect the macroscopic misorientation of the sample. Steps running parallel to the 2×1 dimer rows on the upper terrace are straight, whereas steps perpendicular to these rows are ragged.Keywords
This publication has 17 references indexed in Scilit:
- A scanning tunneling microscope study of the Si(110) surfaceSurface Science, 1989
- A real space investigation of the dimer defect structure of Si(001)‐(2times8)Journal of Microscopy, 1988
- Clean and metal‐contaminated Si(110) surfaces studied by RHEED, XPS and STMJournal of Microscopy, 1988
- Temperature dependence of vicinal Si(111) surfacesPhysical Review B, 1988
- Tunneling images of biatomic steps on Si(001)Physical Review Letters, 1987
- Stabilities of single-layer and bilayer steps on Si(001) surfacesPhysical Review Letters, 1987
- UHV-REM Study of Changes in the Step Structures on Clean (100) Silicon Surfaces by AnnealingJapanese Journal of Applied Physics, 1987
- Scanning tunneling microscopy of Si(001)Physical Review B, 1986
- Structure, Stability, and Origin of () Phases on Si(100)Physical Review Letters, 1986
- Nature of vicinal laser-annealed Si(111) surfacesPhysical Review B, 1981