Hall-coefficient factor and inverse valence-band parameters of holes in natural diamond

Abstract

In strict analogy with the case of silicon, the Hall-coefficient factor of holes in natural diamond is found to be systematically less than unity in the range of temperature $100<T<\mathrm{}1000\mathrm{}$ K investigated here. A microscopic interpretation is shown to provide information on the reliability of a different set of inverse valence-band parameters which can be found currently in the literature. Agreement between theory and experiment confirms the values $\left|A\right|=3.61\mathrm{}$, $\left|B\right|=0.18\mathrm{}$, and $\left|C\right|=3.76\mathrm{}$ deduced from pseudopotential band-structure calculations.