Metal film removal and patterning using a XeCl laser
- 1 December 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (11), 1076-1078
- https://doi.org/10.1063/1.94204
Abstract
Single-shot removal of thin metal films on various substrates has been studied using a XeCl laser and thresholds compared with theoretical modeling of the interaction. Low thresholds and potential for micron resolution with large area projection patterning techniques are demonstrated.Keywords
This publication has 9 references indexed in Scilit:
- Direct etching of polymeric materials using a XeCl laserApplied Physics Letters, 1983
- Optimal regime for forming topological patterns when processing films with laser radiationSoviet Journal of Quantum Electronics, 1982
- Two-phase mechanism of laser-induced removal of thin absorbing films. I. TheoryJournal of Physics D: Applied Physics, 1980
- Two-phase mechanism of laser-induced removal of thin absorbing films. II. ExperimentJournal of Physics D: Applied Physics, 1980
- Thin-film machining by laser-induced explosionApplied Physics Letters, 1977
- Laser-generated RC networksIEEE Journal of Quantum Electronics, 1976
- Optical constants of transition metals: Ti, V, Cr, Mn, Fe, Co, Ni, and PdPhysical Review B, 1974
- Optical Constants of the Noble MetalsPhysical Review B, 1972
- Optical properties of liquid metals at high temperaturesPhilosophical Magazine, 1969