Epitaxial yttrium silicide on (111) silicon by vacuum annealing
- 3 August 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (5), 311-313
- https://doi.org/10.1063/1.98453
Abstract
Epitaxial YSi2−x films have been fabricated. The smooth 430‐Å‐thick silicide films on Si (111) substrates were characterized by a Rutherford backscattering minimum channeling yield χmin =8%, establishing YSi2−x as one of the best known epitaxial silicides. Results of electrical measurements are also presented.Keywords
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